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Radiation hardness of coplanar submicron gap Charge‐Coupled Devices (CCD) with rapid thermal nitrided oxides

 

作者: Kuo‐Chung Lee,   Jenn‐Gwo Hwu,  

 

期刊: Journal of the Chinese Institute of Engineers  （Taylor Available online 1995）
卷期: Volume 18, issue 2  

页码: 185-191

 

ISSN:0253-3839

 

年代: 1995

 

DOI:10.1080/02533839.1995.9677681

 

出版商: Taylor & Francis Group

 

关键词: charge‐couple;irradiation;nitrided oxides;rapid thermal;shadow etch

 

数据来源: Taylor

 

摘要:

Nitrided oxides are used as the CCD's gate oxides in this work. The nitridation process is carried out in NH3or N2O ambient. After irradiation of Co‐60 with a total dose of 106rads, we find that CCD with N2O nitrided gate oxide is more radiation hard than CCD with fresh gate oxide or NH3nitrided gate oxide. Detailed fabrication processes, p‐n junction leakage current, radiation effect, and anneal effect are also discussed in this work.

 

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