Electronic stopping‐power calculations for heavy ions in semiconductors
作者:
S. G. Elkomoss,
A. Pape,
S. Unamuno,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 10
页码: 6045-6049
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345214
出版商: AIP
数据来源: AIP
摘要:
A model for ion stopping in semiconductors, which considers separate stopping contributions from valence and core electrons, and explicitly includes the effect of the gap, has been used to calculate the electronic stopping power of energetic B, P, and As in Si, Ge, GaAs, and CdTe for projectile energies 10 keV–100 MeV. Account was taken of the partially stripped incident ions by means of the effective charge. There is good agreement at low ion velocity with Lindhard and Scharff’s [J. Lindhard and M. Scharff, Phys. Rev.124, 128 (1961)] values which for heavy ions do not depend on effective charge theory, as well as with the semiempirical curves at energiesE≥0.2 MeV/nucleon where they can be compared.
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