A monodisperse Si‐containing photoresist for a bilayer system
作者:
K. Saigo,
F. Watanabe,
Y. Ohnishi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1986)
卷期:
Volume 4,
issue 3
页码: 692-695
ISSN:0734-211X
年代: 1986
DOI:10.1116/1.583598
出版商: American Vacuum Society
关键词: ETCHING;FABRICATION;OXYGEN MOLECULES;VLSI;MASKING;ULTRAVIOLET RADIATION;PHOTORESISTS;LITHOGRAPHY;POLYMERS;SILICON;POLYMERIZATION;ION COLLISIONS;COLLISIONS;SURFACE REACTIONS;photoresist
数据来源: AIP
摘要:
A monodisperse negative Si‐containing photoresist (MAS) has been developed for use as the top imaging layer for a bilayer system. MAS is a formulation of poly(allyldimethylsilyl‐α‐methylstyrene) (PMA Si) and a bisazide. PMA Si was synthesized by anionic polymerization of the monomer withn‐butyl lithium in THF at −78 °C. The polymer has a high softening point (Ts=164–166 °C) and a narrow molecular weight distribution (Mw=41 400,Mw/Mn=1.05). Near‐UV‐exposure has been carried out using a Kasper 2001 P contact printer. TheDigof MAS (0.2 μm in thickness) is 4.5 mJ/cm2on a Si wafer and the γ value is over 2.0. The thickness reductions of MAS and MP‐1300 have been measured under various O2‐RIE conditions. The etching ratio of MP‐1300/MAS ranges from 3:1 to 10:1 depending on conditions and is decreased with an increase in rf power and with a decrease in chamber pressure. Under the optimized development and O2‐RIE condition, 0.75 μm line and space (L/S) patterns were accurately fabricated on the Si wafer having 0.5 μm high step. It is also noteworthy that 2.0 μm L/S patterns with a steep profile were obtained even in the MP‐1300 layer of 4.0 or 6.0 μm in thickness.
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