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Short circuit current in indium tin oxide/silicon solar cells

 

作者: R. Singh,  

 

期刊: Journal of Applied Physics  (AIP Available online 1980)
卷期: Volume 51, issue 9  

页码: 5064-5065

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.328359

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The short circuit current densityJscof indium tin oxide/single and polycrystalline silicon solar cells reported by Schunck and Coche [Appl. Phys. Lett. 35, 863 (1979)] is much higher than other silicon solar cells. We have shown that theJscreported in the above reference does not represent the true value of these devices.

 

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