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Microscale degradation in (GaAl)As double‐heterostructure diode lasers

 

作者: Daisuke Kato,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 31, issue 9  

页码: 588-590

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89789

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The generation of self‐sustained pulsations in degraded (GaAl)As double‐heterostructure diode lasers is explained by invoking microscale absorption centers possessing a large cross section. The microscale degradation centers are found to affect the laser characteristics at a concentration level as low as 1014–1015cm−3.

 

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