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The Velocity Overshoot in Semiconductors According to a Transport Model Derived from the Boltzmann Equation

 

作者: C.R. Drago,   A. Majorana,  

 

期刊: Transport Theory and Statistical Physics  （Taylor Available online 2000）
卷期: Volume 29, issue 7  

页码: 805-823

 

ISSN:0041-1450

 

年代: 2000

 

DOI:10.1080/00411450008200003

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A kinetic model derived from the Boltzmann equation, by using the spherical harmonic expansion method, is considered. This describes the evolution of an electron gas inside a bulk semiconductor in thermal equilibrium. The problem of velocity overshoot is analyzed in detail. A numerical scheme is proposed and the numerical results are shown.

 

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