The properties of Ta2N and TaN compound films as a diffusion barrier between Cu and Si have been investigated by examining compositional depth profiles obtained by Auger electron spectroscopy. The use of a Ta2N barrier is effective for improving the thermal stability of the contact system by raising the silicide formation temperature as compared with the use of a Ta barrier. The contact system of Cu/TaN/Si is fairly stable due to annealing for 1 h even at 750 °C. This is interpreted by the stability of the TaN compound, which is chemically inert to Si as well as Cu at this temperature. Eliminating the grain growth of TaN due to annealing is also effective for suppressing the physical diffusion through the barrier.