Schottky barriers onn‐type GaN films grown by low‐pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron‐gun evaporation to form Schottky contacts in a vacuum below 1×10−6Torr. The Schottky barrier heights of Pt on then‐GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based onC–VandJ–Tmeasurements, the measured barrier height of Pd onn‐GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. ©1995 American Institute of Physics.