Single‐energy Fe implantation at energies in the range 50 keV–2 MeV to achieve a peak Fe concentration of 1–2×1018cm−3is performed into undoped (n‐type) InGaAs layers grown on InP:Fe. The first four statistical moments of the Fe profiles measured by secondary‐ion mass spectrometry are determined. The Pearson IV distribution calculated from these moments matches the implant‐profile closely. Samples implanted with Fe to doses in the range 5x1012–2×1015cm−2at 380 keV are analyzed by Rutherford backscattering measurements to study ion‐induced damage. For 380‐keV implants, amorphization begins at a dose of ≊3×1013cm−2.