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Ion irradiation-induced amorphization in the Al2O3–SiO2system: A comparison with glass formation

 

作者: S. X. Wang,   L. M. Wang,   R. C. Ewing,   R. H. Doremus,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 81, issue 2  

页码: 587-593

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.364219

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The ion beam-induced crystalline-to-amorphous transition has been investigated for crystalline phases in the Al2O3–SiO2system: Al2O3, SiO2(quartz), Al2SiO5(kyanite, andalusite, sillimanite), and 3Al2O3⋅2SiO2(mullite). Xe+1.5 MeV was used to irradiate samples at temperatures from 15 to 1023 Kin situin a transmission electron microscope to determine the critical amorphization doses. The susceptibility to amorphization is (highest to lowest): quartz, sillimanite, kyanite, andalusite, mullite, and alumina. These data are compared to viscosities and activation energies for viscous flow of melts in this system. The doses required for amorphization by ion irradiation are related to the viscosities of the melts. The activation energies for irradiation-enhanced annealing are qualitatively correlated with the activation energies of viscous flow. These results suggest a parallel between ion beam irradiation-induced amorphization and glass formation. Glass-forming “ability’’ correlates with susceptibility to radiation-induced amorphization. ©1997 American Institute of Physics.

 

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