Role of cladding layer thicknesses on strained‐layer InGaAs/GaAs single and multiple quantum well lasers
作者:
D. C. Liu,
C. P. Lee,
C. M. Tsai,
T. F. Lei,
J. S. Tsang,
W. H. Chiang,
Y. K. Tu,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 12
页码: 8027-8034
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353917
出版商: AIP
数据来源: AIP
摘要:
The influences of cladding layer thicknesses on the performance of strained‐layer InGaAs/GaAs graded‐index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.
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