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Resistance bi‐stability in resonant tunneling diode pillar arrays

 

作者: B. W. Alphenaar,   Z. A. K. Durrani,   A. P. Heberle,   M. Wagner,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 10  

页码: 1234-1236

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113247

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have fabricated and characterized resonant tunneling diode pillar arrays. The array resistance switches between two stable states with a maximum room temperature current peak to valley ratio of 500:1. Both the high and the low resistance states are stable at zero bias suggesting that the device may be used for non‐volatile memory storage. ©1995 American Institute of Physics.

 

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