We have studied partial switching characteristics of ferroelectric PZT thin films prepared by sol-gel technique for adaptive-learning MFSFET (Metal/Ferroelectrics/Semi-conductor Field Effect Transistor)applications. In this application, learning or initialization process can be realized by gradual reversal of polarization of the ferroelectric gate insulators. It is demonstrated that the polarization of PZT films can be gradually reversed by applying positive pulses to the MFM (Metal/ Ferroelectrics/Metal) capacitors and can be restored by negative short applying as the same.