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A new polymer insulated gate field‐effect transistor

 

作者: M. Aktik,   Y. Segui,   Bui Ai,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 9  

页码: 5055-5057

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.328356

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This paper describes the fabrication of a plasma‐polymerized siloxane insulated‐gate field‐effect transistor which permits the study of the polymer‐silicon interface. Preliminary results are reported on both fixed surface charge density (1.7×1012cm−2) and hole mobility (500 cm2/V sec) in aP‐channel metal‐insulated semiconductor field‐effect transistor.

 

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