A theoretical appraisal of the quenched multiple domain mode in GaAs microwave diodes
作者:
R.I.Harrison,
S.P.Denker,
H.Berger,
期刊:
Radio and Electronic Engineer
(IET Available online 1969)
卷期:
Volume 37,
issue 1
页码: 11-15
年代: 1969
DOI:10.1049/ree.1969.0004
出版商: IERE
数据来源: IET
摘要:
Quenched multiple domain (q.m.d.) mode oscillations in bulk GaAs have been analysed to obtain the relationships between efficiency, fundamental-frequency power output, fundamental-frequency negative resistance, and d.c. bias voltage. It is found that this highly efficient mode does not have the limitations of transit-time devices and consequently has a frequency-independent power × impedance product. The results demonstrate that q.m.d. oscillators designed with multiple-tuned circuits can operate at twice the efficiency of those operated in single-tuned circuits.
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