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A theoretical appraisal of the quenched multiple domain mode in GaAs microwave diodes

 

作者: R.I.Harrison,   S.P.Denker,   H.Berger,  

 

期刊: Radio and Electronic Engineer  (IET Available online 1969)
卷期: Volume 37, issue 1  

页码: 11-15

 

年代: 1969

 

DOI:10.1049/ree.1969.0004

 

出版商: IERE

 

数据来源: IET

 

摘要:

Quenched multiple domain (q.m.d.) mode oscillations in bulk GaAs have been analysed to obtain the relationships between efficiency, fundamental-frequency power output, fundamental-frequency negative resistance, and d.c. bias voltage. It is found that this highly efficient mode does not have the limitations of transit-time devices and consequently has a frequency-independent power × impedance product. The results demonstrate that q.m.d. oscillators designed with multiple-tuned circuits can operate at twice the efficiency of those operated in single-tuned circuits.

 

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