It is shown that the generation of interface traps by Fowler–Nordheim injection, like those generated by ionizing radiation, is a function of the mechanical strain at the silicon‐silicon dioxide interface. However, because of the current enhancement at the edge of a metal‐oxide‐semiconductor gate when the gate serves as the hot‐electron injector, this phenomenon may only be evident when the device is stressed with the gate biased positively. It is also shown that the capture rate of electrons in the silicon dioxide depends on the strain in the film.