Carrier removal by implanted IONS in GaAs
作者:
H.S. Gecim,
B.J. Sealy,
K.G. Stephens,
Y. Ono,
期刊:
Radiation Effects
(Taylor Available online 1980)
卷期:
Volume 49,
issue 1-3
页码: 169-172
ISSN:0033-7579
年代: 1980
DOI:10.1080/00337578008243088
出版商: Taylor & Francis Group
数据来源: Taylor
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