Lithographic point contacts for transverse electron focusing in bismuth
作者:
M. D. Jaeger,
V. Tsoi,
B. Golding,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 9
页码: 1282-1284
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115953
出版商: AIP
数据来源: AIP
摘要:
An electron‐beam lithography technique for fabricating submicron point contacts to planar surfaces of bulk samples is described. We have demonstrated the technique by creating a linear array of point contacts, oriented along the bisectrix axis of a bismuth single crystal, which act as emitters and collectors in multiprobe transport measurements. In a transverse electron focusing geometry, we find the expected series of periodic voltage peaks as a function of applied magnetic field at low temperatures. The lithographically fabricated contacts offer advantages over conducting‐needle probes in electrical integrity, thermal robustness, lack of damage to the contact site, ability to make multiple submicron contacts with ≤10 &mgr;m separations and ability to align the contacts precisely along crystallographic axes. ©1996 American Institute of Physics.
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