Surface‐ and inner‐microdefects in annealed silicon wafer containing oxygen
作者:
Fumio Shimura,
Hideki Tsuya,
Tsutomu Kawamura,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 1
页码: 269-273
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327419
出版商: AIP
数据来源: AIP
摘要:
Surface‐ and inner‐microdefects examined after a two‐step annealing process are compared and related to the intrinsic gettering phenomenon. After the defects are characterized by means of transmission electron microscopy, the defect types (dislocations, precipitates, and stacking faults) and defect structures as well as nature are correlated with the annealing temperature. It is found from the observations that a surface‐microdefect is a stacking fault extrinsic in nature possibly caused by a process‐induced ’’heavy metal contamination’’ such as copper and that the type of Si‐O complex precipitates generated strongly depends on annealing temperatures: <1050°C⋅⋅⋅ platelike cristobalite, 1100°C<⋅⋅⋅ regular octahedral amorphous SiO2. In addition, the mechanism for the formation of these defects is discussed based on electron microscope observations.
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