SiC(6H) crystals amorphized with14N+‐ion implantation were annealed with CO2laser pulses at intensities of 20–100 MW/cm2. Laser produced crystallization due to residual ray absorption was studied by means of optical spectroscopy,4He+‐ion backscattering spectrometry and channeling as well as Cu K&agr;1and synchrotron x‐ray diffraction topography. At low laser intensities topographs revealed linear and planar defects, which contributed to increased dechanneling independent of analyzing beam energy. Minimum of lattice disorder, which was in some regions of the laser impact area smaller than that obtained in thermal annealing, was attained at the peak laser intensities of about 50 MW/cm2.