首页   按字顺浏览 期刊浏览 卷期浏览 Enhanced electroabsorption in tensile-strainedGayIn1−yAs/AlxIn1−xAs/InPquan...
Enhanced electroabsorption in tensile-strainedGayIn1−yAs/AlxIn1−xAs/InPquantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

 

作者: T. Schwander,   M. Anhegger,   N. Bu¨rger,   T. Feifel,   K. Hirche,   M. Korn,   K. Panzlaff,   S. Schro¨ter,   M. Warth,   P. Ko¨nig,   A. Hangleiter,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 21  

页码: 2855-2857

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119023

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Enhanced electroabsorption, due to field-induced degeneration of light-hole and heavy-hole states, is found in tensile-strainedGa0.53In0.47Asquantum wells withAl0.48In0.52Asbarriers. This behavior seems to be specific for the AlGaInAs material system, where the Stark shift is dominated by heavy holes rather than by electrons. The effect, predicted theoretically by band structure calculations, is verified by differential electrotransmission experiments at 300 and 77 K. ©1997 American Institute of Physics.

 

点击下载:  PDF (127KB)



返 回