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Growth and electrical properties of high mobility epitaxial films of Pb0.8Sn0.2Te deposited by vacuum evaporation

 

作者: A. L. Dawar,   T. D. Sadana,   Pratap Kumar,   S. K. Paradkar,   P. C. Mathur,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1983）
卷期: Volume 1, issue 4  

页码: 1843-1845

 

ISSN:0734-2101

 

年代: 1983

 

DOI:10.1116/1.572225

 

出版商: American Vacuum Society

 

关键词: vacuum evaporation;lead alloys;tin silicates;tellurium molecules;annealing;carrier mobility;epitaxy;epitaxial layers;temperature effects;hall effect;pressure dependence

 

数据来源: AIP

 

摘要:

It is reported that as‐grown vacuum evaporated thin films of Pb0.8Sn0.2Te werep‐type with low mobility. Annealing of these films in vacuum and under tin pressure resulted in a significant increase in mobility. The mobility of the films annealed in tin for 60 min was about 3.6 ×103cm2/V s.

 

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