Field effect studies inp‐type InSb MIS structures
作者:
P. C. Mathur,
O. P. Taneja,
K. V. Krishna,
A. D. Sen,
A. L. Dawar,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 4
页码: 2258-2260
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327852
出版商: AIP
数据来源: AIP
摘要:
Field effect studies on MIS structures of silver‐glassp‐type InSb have been made in the temperature range 77–300 K. It has been observed that the effect of negative gate voltage is to decrease the Hall coefficient, Hall mobility, and grain boundary barrier potential, while the effect of positive gate voltage is opposite but less significant. The results can be explained in terms of accumulation and depletion layers, induced on the surface.
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