Preparation of Thin BaTiO3Films by dc Diode Sputtering
作者:
Yoshihiro Shintani,
Osamu Tada,
期刊:
Journal of Applied Physics
(AIP Available online 1970)
卷期:
Volume 41,
issue 6
页码: 2376-2380
ISSN:0021-8979
年代: 1970
DOI:10.1063/1.1659232
出版商: AIP
数据来源: AIP
摘要:
Direct current diode sputtering of reduced BaTiO3ceramic has been applied to the preparation of thin BaTiO3films. Sputtering was carried out over a range of apparent sputtering rates of ∼500–1200 mg/Ah in atmospheres of argon and air. As the substrate, Pt sheet and fused quartz were principally used. Grain size of the deposited film was ∼1000 Å for the Pt substrate at 400°C. The lattice constants were in good agreement with those of ordinary BaTiO3when the Pt substrate was kept at a temperature above 1000°C, although they were slightly larger for substrates below 900°C. Measurements of optical density and observations of electron micrographs indicated that the sputter‐deposited films have more favorable properties of transparency, uniformity, and crystallization than vacuum‐evaporated films. The film prepared on a Pt substrate at 1000°C in an air atmosphere had a dielectric constant of 1700 and dissipation factor of 1.8% without post‐deposition treatment. However, the remanent polarization was very small and the temperature dependence of the dielectric constant was slight.
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