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Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases

 

作者: M. Freiler,   G. F. McLane,   S. Kim,   M. Levy,   R. Scarmozzino,   I. P. Herman,   R. M. Osgood,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 26  

页码: 3883-3885

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115305

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Deep‐etch‐definedGaAs/Al0.3Ga0.7Assquare features of multiquantum well material, with dimensions as small as 160 nm, have been fabricated using magnetron reactive ion etching (MIE). Luminescence spectroscopy shows confinement of charge carriers to the features’ center. The effects of rf power and etching time on the luminescence efficiency of these features and its concomitant etch‐induced damage are examined. ©1995 American Institute of Physics.

 

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