Nanolithography on semiconductor surfaces under an etching solution
作者:
L. A. Nagahara,
T. Thundat,
S. M. Lindsay,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 3
页码: 270-272
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103711
出版商: AIP
数据来源: AIP
摘要:
We describe a technique for controllably etching nanometer size features into Si(100) and GaAs(100) surfaces with the scanning tunneling microscope while under a (0.05%) HF solution which dissolves oxides. The etching mechanism appears to be due to a field‐induced oxide growth followed by a chemical etching of the oxide. With this technique, we can etch features as small as 20 nm in linewidth.
点击下载:
PDF
(435KB)
返 回