The interfacial layer in MIS amorphous silicon solar cells
作者:
J. McGill,
J. I. B. Wilson,
S. Kinmond,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 1
页码: 548-550
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.325651
出版商: AIP
数据来源: AIP
摘要:
When an insulating layer of TiOxis added beneath the Ni barrier contact of amorphous silicon Schottky diodes, increases are produced in both the open‐circuit voltage and the short‐circuit current. The former change is explained by an increased barrier height and diode factor, and the latter change is at least partially caused by an increase in the width of the space‐charge region.
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