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Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes

 

作者: F. A. Kish,   S. J. Caracci,   N. Holonyak,   J. M. Dallesasse,   A. R. Sugg,   R. M. Fletcher,   C. P. Kuo,   T. D. Osentowski,   M. G. Craford,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 3  

页码: 354-356

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105593

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Data are presented demonstrating the formation of stable, device‐quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x∼0.9) via reaction with H2O vapor (in N2carrier gas) at elevated temperatures (≥500 °C). The oxide exhibits excellent current‐blocking characteristics and is employed to fabricate continuous room‐temperature stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P double‐heterostructure laser diodes.

 

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