Performance of the plasma deposited tungsten nitride barrier to prevent the interdiffusion of Al and Si
作者:
Chang Woo Lee,
Yong Tae Kim,
Choochon Lee,
Jeong Yong Lee,
Suk‐Ki Min,
Young Wook Park,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 69-72
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587110
出版商: American Vacuum Society
关键词: INTEGRATED CIRCUITS;ALUMINIUM;SILICON;TUNGSTEN NITRIDES;THIN FILMS;CVD;PLASMA;ANNEALING;ATOM TRANSPORT;DIFFUSION BARRIERS;Al;Si;(W,N)
数据来源: AIP
摘要:
It is proposed that the plasma enhanced chemical vapor deposited tungsten nitride (PECVD‐W–N) thin film is used as a diffusion barrier to prevent the interdiffusion between Al and Si during postannealing process. The atomic concentration of N in W–N film deposited with NH3/WF6partial pressure ratio of 0.5 is about 33 at. % and its resistivity is 90–110 μΩ cm. The Rutherford backscattering spectrometry, Auger electron depth profiles, x‐ray diffraction, and scanning electron micrographs show that 900 Å PECVD‐W67N33film interposed between Al and Si is more impermeable than PECVD‐W film due to N atoms and it also keeps its chemical integrity during the postfurnace annealing at 600 °C for 30 min in Ar ambient.
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