Creep of 6H α‐Silicon Carbide Single Crystals
作者:
Gregory S. Corman,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1992)
卷期:
Volume 75,
issue 12
页码: 3421-3424
ISSN:0002-7820
年代: 1992
DOI:10.1111/j.1151-2916.1992.tb04444.x
出版商: Blackwell Publishing Ltd
数据来源: WILEY
摘要:
The compressive creep behavior of single‐crystal 6H α‐SiC was measured for orientations parallel to and at 45° to [0001]. Deformation of the 45° orientation was dominated by basal slip. Steady‐state creep rates above 10‐7/s were measured at temperatures as low as 800°C. An activation energy of 277 kJ/mol and a stress exponent of 3.32 were determined. Creep testing with applied stresses parallel to [0001] was performed at 1650°C to 1850°C, yielding a stress exponent and activation energy of 4.93 and 180 kJ/mol, respectively. The occurrence of basal slip in the [0001]specimens suggested that significant off‐axis stresses were present
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