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Hydrogen-implant induced exfoliation of silicon and other crystals

 

作者: C. M. Varma,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 24  

页码: 3519-3521

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120378

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple theory is formulated in which the pressure of bubbles containing hydrogen molecules in the implanted region drives exfoliation due to the anisotropy of the elastic forces and the evaporation or slow diffusion of atomic hydrogen to molecular hydrogen in the bubbles leading to a catastrophic growth in the bubble radius and the molecular fraction as temperature increases. The process of blistering and cratering at small implant depths is also considered. Comparison to recent experiments is made. ©1997 American Institute of Physics.

 

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