Study of epitaxial growth of ZnTe on GaAs (001) by channeling
作者:
A. C. Chami,
E. Ligeon,
J. Fontenille,
G. Feuillet,
R. Danielou,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 2
页码: 637-641
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341953
出版商: AIP
数据来源: AIP
摘要:
Channeling is used to describe defects associated with molecular‐beam epitaxy growth of (001) ZnTe on (001) GaAs. A high dislocation density (2×1011/cm2) is found in the immediate vicinity of the interface, in addition to misfit dislocations at the interface. Channeling is found to be a strain sensitive method useful for misfit dislocation analysis. Direct scattering on misfit dislocations together with elastic theory calculations reveals that the extent of the misfit dislocation elastic field increases with the interface roughness.
点击下载:
PDF
(552KB)
返 回