High‐frequency response ofp‐substrate buried crescent InGaAsP lasers
作者:
A. G. Weber,
Wu Ronghan,
D. Bimberg,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2499-2500
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346514
出版商: AIP
数据来源: AIP
摘要:
The relaxation oscillation frequency ofp‐substrate buried crescent InGaAsP lasers is measured as a function of the output power in the switched‐on state. The lasers are excited by a steplike current pulse at room temperature. The highest resonance frequency observed for a 350‐&mgr;m long cavity is 12.1 GHz equivalent to an intrinsic 3‐dB cutoff frequency of 18.8 GHz at an optical power of 9 mW/facet according to an injection current of 3.8 times threshold current, this is so far the best ever published value for ap‐substrate laser.
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