The electrical and optical properties of GaAs&sngbnd;GaxAl1−xAs injection lasers produced by solution epitaxy are described. These lasers are composed of three layers,n‐GaAs, a thinp‐GaAs layer, and ap‐GaxAl1−xAs layer. In these lasers, the threshold currentJthis a strong function of the width of thep‐GaAs layerd, being optimum wheredis about 2 &mgr;. The temperature dependence ofJthis comparatively small below some maximum temperatureTM, above which it increases very rapidly. The values ofJthobtained near room temperature for these lasers are lower than have previously been reported for injection lasers. Fabry‐Perot‐type diodes with cavities of about 400 &mgr; may be reproducibly prepared withJth(300°K) about 10 000 A/cm2. The lowestJth(300°K) observed for one of these units was 8600 A/cm2. Units with fully internally reflected modes can be reproducibly prepared withJth(300°K) ≈6000–7000 A/cm2. The lowJth(300°K) of these lasers is attributed primarily to carrier confinement, although improved optical confinement and reduced absorption losses may also play a role. The behavior ofJthatTMand the minimum inJthas a functiondare attributed to hole injection.