Some of the basic considerations in the design of the electron optics of a variable line scanning (VLS) system, a particular form of variable‐shape electron‐beam lithography system, are discussed. In the VLS system, the electron beam is projected on the resist‐coated wafer in the form of a narrow line whose length and position can be varied simultaneously as it is scanned. The writing is done as the stage is moved in a serpentine fashion under laser control with the pattern features placed using both raster and vectorial placement techniques. The line can be produced in either of two orthogonal directions in order to maximize the exposure rate. In general, the required source brightness is greater than that of a more conventional‐shaped‐beam system, however, this can be achieved readily with LaB6at a desirable operating temperature. Exposed and developed patterns demonstrate the resolution capabilities of the optics.