Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
作者:
H. P. Wei,
D. C. Tsui,
M. Razeghi,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 6
页码: 666-668
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95349
出版商: AIP
数据来源: AIP
摘要:
A persistent photoconductivity is observed in the transport of the high mobility two‐dimensional electron gas in In0.53Ga0.47As/InP heterostructures. Low field Hall measurements from 300 to 4.2 K and the quantized Hall effect in the high field limit are studied with radiation from visible and infrared light‐emitting diodes. Our results demonstrate conclusively that the effect is due to photogeneration of electron‐hole pairs in the heterostructure and trapping of holes in the In0.53Ga0.47As.
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