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Degradation of band‐gap photoluminescence in GaAs

 

作者: D. Guidotti,   Eram Hasan,   H. J. Hovel,   Marc Albert,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 14  

页码: 912-914

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98030

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Evidence is presented to show that the degradation of near‐band‐gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron‐hole plasma near the surface.

 

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