Switching characteristics of hydrogenated amorphous silicon/crystalline silicon heterojunction devices
作者:
Yu‐Wen Chen,
Yean‐Kuen Fang,
Hong‐Da Lee,
Chun‐Yen Chang,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 11
页码: 1034-1036
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102607
出版商: AIP
数据来源: AIP
摘要:
A new structure of a three‐terminal hydrogenated amorphous silicon/crystalline silicon (a‐Si:H/c‐Si) heterojunction switching device is successfully developed. The device can be controlled by a gate bias. The switching voltage, holding voltage, and switching current all increase with an increase of undopeda‐Si:H thickness. The electrical characteristics and switching phenomena of this device are discussed.
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