The conductivity of a hydrogenated amorphous siliconn+‐intrinsic‐n+(n‐i‐n) structure is reported as a function of temperature. The space‐charge‐limited conductivity &sgr; is shown to follow the Meyer–Neldel rule (MNR) [W. Meyer and H. Neldel, Z. Tech. Phys.18, 588 (1937)]: &sgr; =&sgr;00 exp(Ea/kT0) exp(−Ea/kT), whereEais the conductivity activation energy,kis Boltzmann’s constant, andTis the absolute temperature. The characteristic MNR parameters found are &sgr;00=10−2.4±0.1(&OHgr; cm)−1andT0=590±10 K. These values are practically equal to those previously found for the MNR in the ohmic conductivity in a series of hydrogenated amorphous siliconn‐i‐nstructures with varyingi‐layer thicknesses. It is argued that the MNR can be quantitatively explained by the statistical shift of the Fermi energy and that a single set of parameters corresponding to &sgr;00=10−3±1(&OHgr;  cm)−1andT0=550±100 K is applicable for both the space‐charge limited and the ohmic conductivity ofi‐type hydrogenated amorphous silicon. The MNR parameters are rather insensitive to density of states details.