To investigate the effects of strain and quantum confinement, Auger rates are calculated for ann‐type strained InAs0.9Sb0.1/In0.87Ga0.13As mid‐infrared laser structure as a function of temperature. Compressive strain in the quantum wells reduces the mass of the holes which leads to a reduction in the Auger rate compared with an unstrained quantum well. The rate reduction is explained in terms of a qualitative analysis of the role of strain. The rate includes contributions from inter‐subband Auger transitions which are found to dominate the rate at low temperature.