The effect of electron beam impact on the oxidation of Si (100) by oxygen has been studied using x-ray photoelectron spectroscopy and Auger electron spectroscopy. It was found that electron beam impact can enhance the oxidation of Si (100) by oxygen at low temperatures, resulting in silicon dioxide formation. Furthermore, electron energy-dependent film growth experiments were carried out onO2(a) and an electron attachment resonance energy of∼10.1 eVwas found. A possible electron-induced oxidation mechanism is proposed which involves dissociative electron attachment for adsorbedO2species and the formation of O andO−species from adsorbedO2−.©1997 American Institute of Physics.