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Modelling of the Potential of Epitaxial Solar Cells on Upgraded Metallurgical Grade Silicon

 

作者: A. LUQUE,   I. TOBIAS,  

 

期刊: International Journal of Solar Energy  （Taylor Available online 1988）
卷期: Volume 6, issue 2  

页码: 105-118

 

ISSN:0142-5919

 

年代: 1988

 

DOI:10.1080/01425918808914223

 

出版商: Taylor & Francis Group

 

关键词: solar cells;epitaxy;back surface field;modelling;metallurgical grade silicon

 

数据来源: Taylor

 

摘要:

An analysis is presented of the potential efficiency of epitaxial silicon cells grown on upgraded metallurgical grade substrates. The analysis is done varying the different base and substrate parameters. It is concluded that with reasonably good lifetime parameters the combination of a high doping in the substrate and of a thin active epitaxial zone can lead to better efficiencies than those achievable with conventional non epitaxial cells.

 

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