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Simulation of oxygen vacancies at the Si–SiO2interface

 

作者: S. Carniato,   G. Boureau,   J. Harding,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1995）
卷期: Volume 134, issue 1-4  

页码: 179-183

 

ISSN:1042-0150

 

年代: 1995

 

DOI:10.1080/10420159508227209

 

出版商: Taylor & Francis Group

 

关键词: Monte-Carlo;interface;silicon;oxidation;vacancy

 

数据来源: Taylor

 

摘要:

The Si(001)/SiO2(tridymite) interface has been simulated using a Monte-Carlo method. It has been shown that in this way reasonable values of angles and interatomic distances are obtained. The oxygen defect formation energy dependence with different vacancy sites has been studied. Because of coulombic interactions, the formation of vacancies is much easier in the vicinity of the interface.

 

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