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Vertical‐cavity surface‐emitting InGaAs/GaAs lasers with planar lateral definition

 

作者: M. Orenstein,   A. C. Von Lehmen,   C. Chang‐Hasnain,   N. G. Stoffel,   J. P. Harbison,   L. T. Florez,   E. Clausen,   J. E. Jewell,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 24  

页码: 2384-2386

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102923

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A planarity preserving method for the definition of vertical‐cavity surface‐emitting lasers (VC‐SEL) is described. A strained‐layer InGaAs quantum well VC‐SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm2and efficient cw operation. This method facilitates large‐scale integration of VC‐SEL devices.

 

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