Surface statistics in narrow‐gap zincblende semiconductors are examined. The model employed consists of a nonparabolic conduction band and a parabolic valence band taking indium antimonide as a representative for this family of materials. The statistics of the surface space‐charge region are evaluated for a range of surface potentials and bulk concentrations using both the nonparabolic band and the standard parabolic band models. These analyses are made using the semiclassical approach.