Oxygen partial‐pressure dependence of the length (L) of the oxidation‐induced stacking faults (OISF) in (100) silicon has been investigated in the temperature range 1150–1250 °C (so‐called retrogrowth range of temperatures). It has been observed that for a given time of oxidation the maximum temperature (TM), above which OISF start shrinking instead of growing decreases with decreasing partial pressure (pO2) of oxygen in the oxidizing ambient. On the other hand, for a givenpO2,TMdecreases with increasing time of oxidation. Based on the present results, the constantK′ in the equationL=K′pmO2tn exp(−Q/kT) has been calculated (wheremandnare number exponents,Qis the activation energy, andTis the temperature).K′ has been found to decrease rapidly at temperatures above 1150 °C. These results agree reasonably well with the quantitative model proposed by this author and the observation that the temperature at which OISF start vanishing could be lowered by reducing the oxidation rate constant of silicon (as done in present experiments by loweringpO2).