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Annealing behavior of light‐induced defects in boron‐doped hydrogenated amorphous silicon alloys

 

作者: W. den Boer,   S. Guha,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 57, issue 12  

页码: 5539-5541

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.334835

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Light‐induced effects in lightly boron‐doped hydrogenated amorphous silicon alloys have been studied in coplanar and sandwich sample configurations. It is observed that metastable changes in these films anneal out at a significantly lower temperature (≤ 100 °C) than in undoped films.

 

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