Properties of SmB6Doped with Eu and Gd
作者:
T. H. Geballe,
A. Menth,
E. Buehler,
G. W. Hull,
期刊:
Journal of Applied Physics
(AIP Available online 1970)
卷期:
Volume 41,
issue 3
页码: 904-905
ISSN:0021-8979
年代: 1970
DOI:10.1063/1.1659011
出版商: AIP
数据来源: AIP
摘要:
SmB6behaves as a nonmagnetic semiconductor at low temperatures. Gd‐ and Eu doped samples have been prepared. The paramagnetic behavior of the doped materials shows that Eu remains divalent and consequently it does not alter the low‐temperature electrical properties appreciably. Gd, on the other hand, increases the electrical conductivity and the paramagnetic behavior corresponds to the trivalent Gd ion. The paramagnetic susceptibility flattens out below 0.1°K indicating a magnetic ordering of the Eu samples in contrast to the pure SmB6.
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