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Growth and characterization of a delta‐function doping layer in Si

 

作者: H. P. Zeindl,   T. Wegehaupt,   I. Eisele,   H. Oppolzer,   H. Reisinger,   G. Tempel,   F. Koch,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 17  

页码: 1164-1166

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97950

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present a procedure whereby a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth. Analysis by secondary ion mass spectroscopy and transmission electron microscopy shows that the width of such &dgr;‐function doping layers is only a few lattice planes. Tunneling spectroscopy and transport measurements give evidence for quantum confinement of the electronic charge in the layer and thus confirm the narrow width.

 

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