Methods for the fabrication of metal‐insulator‐semiconductor structures with the use of eptaxial PbTe films are described. These methods obviate the need for treating the semiconductor surface. They involve epitaxial film growth in a vacuum environment by hot‐wall epitaxy followed by (1) deposition of ZrO2without breaking vacuum and (2) deposition of pyrolytic SiO2. Capacitance‐voltage characteristics in both cases closely correspond to theoretical values. Depletion‐layer generation is shown to be the dominant contribution to the inversion conductance.